SSM3J120TU 2007-11-01 1 toshiba field effect transistor silicon p channel mos type SSM3J120TU power management switch applications high-current switching applications ? 1.5 v drive ? low on-resistance r on = 140 m ? (max) (@v gs = -1.5 v) r on = 78 m ? (max) (@v gs = -1.8 v) r on = 49 m ? (max) (@v gs = -2.5 v) r on = 38 m ? (max) (@v gs = -4.0 v) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v ds -20 v gate-source voltage v gss 8 v dc i d -4.0 drain current pulse i dp -8.0 a p d (note 1) 800 drain power dissipation p d (note 2) 500 mw channel temperature t ch 150 c storage temperature t stg ?55~150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1 : mounted on ceramic board (25.4 mm 25.4 mm 0.8 t, cu pad: 645 mm 2 ) note 2 : mounted on fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 645 mm 2 ) electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit v (br) dss i d = ?1 ma, v gs = 0 ?20 ? ? drain-source breakdown voltage v (br) dsx i d = ?1 ma, v gs = +8 v ?12 ? ? v drain cut-off current i dss v ds = ?20 v, v gs = 0 ? ? ?10 a gate leakage current i gss v gs = 8 v, v ds = 0 ? ? 1 a gate threshold voltage v th v ds = ?3 v, i d = ?1 ma ?0.3 ? ?1.0 v forward transfer admittance ? y fs ? v ds = -3 v, i d = -2.0 a (note 3) 6.1 12.1 ? s i d = -3.0 a, v gs = -4.0 v (note 3) ? 28 38 i d = -2.0 a, v gs = -2.5 v (note 3) ? 34 49 i d = -1.0 a, v gs = -1.8 v (note 3) ? 47 78 drain-source on-resistance r ds (on) i d = -0.3 a, v gs = -1.5 v (note 3) ? 60 140 m input capacitance c iss ? 1484 ? pf output capacitance c oss ? 185 ? pf reverse transfer capacitance c rss v ds = ?10 v, v gs = 0 f = 1 mhz ? 169 ? pf turn-on time t on ? 67 ? switching time turn-off time t off v dd = ?10 v, i d = ?2.0 a v gs = 0 ~ ?2.5 v, r g = 4.7 ? 92 ? ns unit: mm jedec D jeita D toshiba 2-2u1a weight: 6.6mg (typ.) 1. gate 2. source 3. drain -0.05 1.70.1 2.10.1 0.650.05 1 2 2.00.1 3 0.70.05 +0.1 0.3 0.1660.05 ufm
SSM3J120TU 2007-11-01 2 characteristics symbol test condition min typ. max unit total gate charge q g ? 22.3 ? gate-source charge q gs ? 14.9 ? gate-drain charge q gd v ds = ?16 v, i ds = ? 4.0 a, v gs = ? 4.0 v, ? 7.3 ? nc drain-source forward voltage v dsf i d = 4.0 a, v gs = 0 (note 3) ? 0.8 1.2 v note 3: pulse test switching time test circuit (a) test circuit (b) v in marking equivalent circuit (top view) precaution v th can be expressed as the voltage between the gate and source when the low operating current value is i d = -1ma for this product. for normal switching operation, v gs (on) requires a higher voltage than v th and v gs (off) requires a lower voltage than v th . (the relationship can be established as follows: v gs (off) < v th < v gs (on). ) be sure to take this into consideration when using the device. handling precaution when handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against static electricity. op erators should wear anti-st atic clothing, and containers and other objects that come into direct contact wi th devices should be made of anti-static materials. (c) v out v dd = -10 v r g = 4.7 d.u. < = 1% v in : t r , t f < 5 ns common source ta = 25 c in 0 ? 2.5v 10 s v dd out r g r l t on 90% 10% ?2.5 v 0 v 90% 10% t off t r t f v ds ( on ) v dd jjb 1 2 3 1 2 3
SSM3J120TU 2007-11-01 3 drain - source voltage v ds (v) i d ? v ds drain current i d (a) 0 -8 0 -0.5 -1 -1.5 -2 -6 gate - source voltage v gs (v) i d ? v gs drain current i d (ma) -10000 -0.01 0 -100 -1000 -1 -10 -0.1 -1.6 -0.2 -0.6 ? 25 c common source v ds = -3 v ta = 85 c 25 c -0.4 drain ? source on-resistance r ds (on) (m ) gate - source voltage v gs (v) r ds (on) ? v gs 0 0 -2 -4 -6 -8 20 40 70 90 i d = -0.3 a common source ambient temperature ta (c) r ds (on) ? ta drain ? source on-resistance r ds (on) (m ) common source 100 0 ? 50 i d = -0.3 a / v gs = -1.5 v 0 50 150 20 40 60 80 100 drain current i d (a) r ds (on) ? i d drain ? source on-resistance r ds (on) (m ) 80 0 0 20 -2 -6 -6 -8 30 50 70 common source ta = 25 c vgs = -1.5 v vgs = -1.2 v -1.5 v -1.4 -1.2 -1.0 -0.8 -2.5 v -1.8 v gate - source voltage v gs (v) drain ? source on-resistance r ds (on) (m ) 0 -4 -4 -8 0 20 40 60 80 r ds (on) ? v gs 25 c ta = 85 c ? 25 c -2.0 a / -2.5 v -1.0 a / -1.8 v -2 -4 i d = -2.0 a common source ta = 85 c 25 c ? 25 c 10 40 60 90 common source ta = 25 c -1.8 v -2.5 v 90 70 50 30 10 80 60 50 30 10 -2 -4.0 v -3.0 a / -4.0 v
SSM3J120TU 2007-11-01 4 switching time t (ns) drain current i d (a) t ? i d 1 0.01 100 0.1 1000 1 10 common source v dd = -10 v v gs = 0 -2.5 v ta = 25 c r g = 4.7 t off t f 10 t on t r drain reverse current i dr (a) drain-source voltage v ds (v) i dr ? v ds 0 -1 -2 0 0.6 0.2 0.8 0.4 1.0 -3 -4 common source v gs = 0 v ta = 25 c g d s i dr ambient temperature ta (c) v th ? ta gate threshold voltage v th (v) -0.8 0 ? 25 0 25 150 -0.2 -0.4 -0.6 -0.7 50 75 100 125 common source v ds = -3 v i d = -1 ma drain current i d (ma) forward transfer admittance ? y fs ? (s) |y fs | ? i d common source v ds = -3 v ta = 25 c 0.01 -10000 1 0.1 1 10 -10 -100 -1000 30 3 0.03 0.3 drain ? source voltage v ds (v) c ? v ds capacitance c (pf) 10 -0.1 -1 -10 -100 100 1000 5000 3000 300 500 30 50 common source ta = 25 c f = 1 mhz v gs = 0 v c iss c oss c rss total gate charge q g (nc) dynamic input characteristic gate-source voltage v gs (v) 0 0 -4 10 20 50 -10 -2 -8 -6 -0.5 -0.1 -0.3 70 v dd = -16 v common source i d = -4.0 a ta = 25 c 30 40 60
SSM3J120TU 2007-11-01 5 pd - ta 0 200 400 600 800 1000 0 20 40 60 80 100 120 140 160 ambient temperature ta(c) drain power dissipation pd(mw) a a: mounted on fr4 board (25.4mm25.4mm1.6mm) cu pad :25.4mm25.4mm b:mounted on ceramic board (25.4mm25.4mm0.8mm) cu pad :25.4mm25.4mm b rth - tw 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 pulse width tw (s) transient thermal impedance rth(c/w) single pulse a:mounted on ceramic board (25.4mm25.4mm0.8mm) cu pad :25.4mm25.4mm b:mounted on fr4 board (25.4mm25.4mm1.6mm) cu pad :25.4mm25.4mm c:mounted on fr4 board (25.4mm25.4mm1.6mm) cu pad :0.45mm0.8mm3 a b c
SSM3J120TU 2007-11-01 6 restrictions on product use 20070701-en general ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity a nd vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringement s of patents or other rights of the third parties which may result from its use. no license is granted by implic ation or otherwise under any patents or other rights of toshiba or the third parties. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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